Magneto-ballistic transport in GaN nanowires
نویسندگان
چکیده
Articles you may be interested in Magneto transport in crossed electric and magnetic fields in compensated bulk GaN Weak anti-localization of the two-dimensional electron gas in modulation-doped Al x Ga 1 − x N ∕ GaN heterostructures with two subbands occupation Appl.
منابع مشابه
Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کاملSynthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
متن کاملElectron transport in InAs/AlGaSb ballistic rectifiers
Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have bee...
متن کاملCoherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson jun...
متن کاملElectron transport in multigate In x Ga 1-x as nanowire FETs: from diffusive to ballistic regimes at room temperature.
The III-V semiconductors such as In x Ga 1-x As (x = 0.53-0.70) have attracted significant interest in the context of low power digital complementary metal-oxide-semiconductor (CMOS) technology due to their superior transport properties. However, top-down patterning of III-V semiconductor thin films into strongly confined quasi-one-dimensional (1D) nanowire geometries can potentially degrade th...
متن کامل